Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

E-ISSN： 1662-9752|2015|821|978-981

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 978-981

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface: A molecular dynamics study

By Chirita V. Hultman L. Wallenberg L.R.

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 47-49

Elsevier

Access to resources Recommend Favorite

Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)

By Teker K. Jacob C. Chung J. Hong M.H.

Thin Solid Films, Vol. 371, Iss. 1, 2000-08 ,pp. : 53-60

Elsevier

Access to resources Recommend Favorite

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 193-196

Trans Tech Publications

Access to resources Recommend Favorite

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

By Zhu J. Liu S. Liang J.

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 307-311

Elsevier

Access to resources Recommend Favorite

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 147-150

Trans Tech Publications

Access to resources Recommend Favorite