Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|978-981
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 978-981
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two distinct growth regimes. The defects in the films were found to be antiphase boundaries and μ-twins. The influence of the growth parameters as well as the 3CSiC structural properties on these defects are discussed. The impact of a subsequent thermal annealing, under different gas environments, is also investigated and reveals some noticeable differences according to the gas environment used in the annealing process.
Related content
Access to resources
Recommend
Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)
Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. :
Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :