Ion implantation induced nitrogen defects in GaN

Author: Usman Muhammad   Hallén Anders   Nazir Aftab  

Publisher: IOP Publishing

E-ISSN: 1361-6463|48|45|455107-455112

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.48, Iss.45, 2015-11, pp. : 455107-455112

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Abstract