Ion implantation induced nitrogen defects in GaN

By Usman Muhammad   Hallén Anders   Nazir Aftab  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 45, 2015-11 ,pp. : 455107-455112

IOP Publishing

Access to resources Recommend Favorite

N – K edge NEXAFS study of the defects induced by indium implantation in GaN

By  

Journal of Physics: Conference Series , Vol. 190, Iss. 1, 2009-11 ,pp. : 420-423

IOP Publishing

Access to resources Recommend Favorite

He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer

By Zhuo Wang   Yu-Jie Gao   Meng-Kai Li   Fei Zhu   Da-Cheng Zhang   Chang-Long Liu  

Chinese Physics C, Vol. 37, Iss. 1, 2013-01 ,pp. : 16001-16006

IOP Publishing

Access to resources Recommend Favorite

Ion implantation induced defects in Fe-Cr alloys studied by conventional positron annihilation lifetime spectroscopy

By  

Journal of Physics: Conference Series , Vol. 265, Iss. 1, 2011-01 ,pp. : 129-132

IOP Publishing

Access to resources Recommend Favorite

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-307-C5-311

Edp Sciences

Access to resources Recommend Favorite