Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Author： Kaganer Vladimir M   Jenichen Bernd   Ramsteiner Manfred   Jahn Uwe   Hauswald Christian   Grosse Frank   Fernández-Garrido Sergio   Brandt Oliver  

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|38|385105-385115

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.38, 2015-09, pp. : 385105-385115

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