Studying defect structure of GaN epilayers by means of three-beam X-ray diffraction analysis

By Kyutt R.  

Technical Physics Letters, Vol. 36, Iss. 8, 2010-08 ,pp. : 690-693

MAIK Nauka/Interperiodica

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Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

By Kaganer Vladimir M   Jenichen Bernd   Ramsteiner Manfred   Jahn Uwe   Hauswald Christian   Grosse Frank   Fernández-Garrido Sergio   Brandt Oliver  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 38, 2015-09 ,pp. : 385105-385115

IOP Publishing

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Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements

By Kyutt R.   Ratnikov V.   Mosina G.   Shcheglov M.  

Physics of the Solid State, Vol. 41, Iss. 1, 1999-01 ,pp. : 25-31

MAIK Nauka/Interperiodica

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Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis

By Lesnik Andreas   Bläsing Jürgen   Hennig Jonas   Dadgar Armin   Krost Alois  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 35, 2014-09 ,pp. : 355106-355111

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Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction

By Lacroix B.   Leclerc S.   Declémy A.   Lorenz K.   Alves E.   Ruterana P.  

EPL (EUROPHYSICS LETTERS), Vol. 96, Iss. 4, 2011-11 ,pp. : 46002-46002

Edp Sciences

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