Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

Author: Danković Danijel   Stojadinović Ninoslav   Prijić Zoran   Manić Ivica   Davidović Vojkan   Prijić Aneta   Djorić-Veljković Snežana   Golubović Snežana  

Publisher: IOP Publishing

E-ISSN: 1741-4199|24|10|106601-106609

ISSN: 1674-1056

Source: Chinese Physics B, Vol.24, Iss.10, 2015-10, pp. : 106601-106609

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract