Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers

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Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 120-125

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Positron Annihilation Lifetime Spectroscopy Application to In Situ Monitoring of n-Heptane Sorption in Mesopores

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Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

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Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 184-189

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Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure

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Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 427-433

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Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals

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Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 296-301

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