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Cambridge University Press

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Analysis and design of a high-gain 100–180-GHz differential power amplifier in 130 nm SiGe BiCMOS

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A 60 GHz 14 dBm power amplifier with a transformer-based power combiner in 65 nm CMOS

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Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1–4 GHz range

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A new GaN-based high-speed and high-power switching circuit for envelope-tracking modulators

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