A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

Author: Xu Piao-Rong   Yao Ruo-He  

Publisher: Edp Sciences

E-ISSN: 1286-0050|72|3|30102-30102

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.72, Iss.3, 2015-12, pp. : 30102-30102

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Abstract