AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature

Author: Zhang Lu   Wang Xiaoliang   Xiao Hongling   Chen Hong   Feng Chun   Shen Guangdi   Wang Zhanguo   Hou Xun  

Publisher: Edp Sciences

E-ISSN: 1286-0050|62|2|20105-20105

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.62, Iss.2, 2013-05, pp. : 20105-20105

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