Atomic and electronic properties of P/Si(1 1 1)-(2 × 1) surface

Author： Ayduğan Z.   Kaderoğlu Ç.   Alkan B.   Çakmak M.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|56|3|31302-31302

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.56, Iss.3, 2011-11, pp. : 31302-31302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Charge conduction mechanisms and photovoltaic properties of n-(Ga2S3-Ga2Se3)/p-Si heterojunctions

By Abd El-Rahman K. F.  

EPJ Applied Physics (The), Vol. 37, Iss. 2, 2007-01 ,pp. : 143-147

Edp Sciences

Access to resources Recommend Favorite

ZnO/PS/p-Si heterojunction properties

By Muhsin Nayef Uday   Waleed Muayad Mohammed   Amer Khalaf Haider  

EPJ Applied Physics (The), Vol. 66, Iss. 2, 2014-06 ,pp. : 20104-20104

Edp Sciences

Access to resources Recommend Favorite

Influence of temperature on the electronic properties of Si δ-doped GaAs structures

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

EPJ Applied Physics (The), Vol. 21, Iss. 2, 2002-11 ,pp. : 97-101

Edp Sciences

Access to resources Recommend Favorite

Electronic properties of two coupled Si δ-doped GaAs structures

By Ozturk E.   Sari H.   Ergun Y.   Sokmen I.  

EPJ Applied Physics (The), Vol. 21, Iss. 2, 2002-11 ,pp. : 91-95

Edp Sciences

Access to resources Recommend Favorite

Influence of an applied electric field on the electronic properties of Si δ-doped GaAs

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

EPJ Applied Physics (The), Vol. 24, Iss. 3, 2003-10 ,pp. : 189-194

Edp Sciences

Access to resources Recommend Favorite