CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD

Publisher： Edp Sciences

E-ISSN： 1764-7177|02|C2|C2-47-C2-54

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-47-C2-54

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Characterisation of LPCVD silicon oxynitride films by optical spectroscopy

By  

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-963-Pr3-969

Edp Sciences

Access to resources Recommend Favorite

THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-19-C2-31

Edp Sciences

Access to resources Recommend Favorite

MODELING OF LPCVD SILICON NITRIDE PROCESS

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C5, 1989-05 ,pp. : C5-67-C5-72

Edp Sciences

Access to resources Recommend Favorite

Determining the Parameters of Importance of a Graphene Synthesis Process Using Design-of-Experiments Method

By Narula Udit   Tan Cher Ming  

Applied Sciences, Vol. 6, Iss. 7, 2016-07 ,pp. : 204-204

MDPI

Access to resources Recommend Favorite

Heat and mass transfer during producing silicon layers by chloride LPCVD process

By  

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-171-Pr3-176

Edp Sciences

Access to resources Recommend Favorite