MODELING OF LPCVD SILICON NITRIDE PROCESS

Publisher： Edp Sciences

E-ISSN： 0449-1947|50|C5|C5-67-C5-72

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.50, Iss.C5, 1989-05, pp. : C5-67-C5-72

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Heat and mass transfer during producing silicon layers by chloride LPCVD process

By  

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-171-Pr3-176

Edp Sciences

Access to resources Recommend Favorite

CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-47-C2-54

Edp Sciences

Access to resources Recommend Favorite

THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-19-C2-31

Edp Sciences

Access to resources Recommend Favorite

Experimental and chemical kinetic study of silicon nitride via LPCVD at low temperature from disilane and ammonia

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-395-C3-402

Edp Sciences

Access to resources Recommend Favorite

LPCVD SILICON FOR ACTIVE DEVICES

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C5, 1989-05 ,pp. : C5-467-C5-477

Edp Sciences

Access to resources Recommend Favorite