Publisher: Edp Sciences
E-ISSN: 1764-7177|01|C7|C7-297-C7-301
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.01, Iss.C7, 1991-12, pp. : C7-297-C7-301
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
0.85 and 1.54 µm emissions of CaF
Le Journal de Physique IV, Vol. 04, Iss. C4, 1994-04 ,pp. :
By Shengurov V. Svetlov S. Chalkov V. Andreev B. Krasil’nik Z. Kryzhkov D.
Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. :
Cu-doped GaN grown by molecular beam epitaxy
Journal of Physics: Conference Series , Vol. 200, Iss. 6, 2010-01 ,pp. :