Related content

Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy

By  

Le Journal de Physique IV, Vol. 04, Iss. C7, 1994-07 ,pp. : C7-129-C7-132

Edp Sciences

Access to resources Recommend Favorite

The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon

By Bashchenko S.   Blonskii I.   Brodyn M.   Kadan V.   Skryshevskii Yu.  

Technical Physics, Vol. 46, Iss. 1, 2001-01 ,pp. : 63-67

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Hysteresis of the current-voltage characteristics of porous-silicon light-emitting structures

By Laptev A.   Prokaznikov A.   Rud’ N.  

Technical Physics Letters, Vol. 23, Iss. 6, 1997-06 ,pp. : 440-442

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Enlargement of Photonic Band Gap in Porous Silicon Dielectric Mirrors

By Archuleta-Garcia R.   Moctezuma-Enriquez D.   Manzanares-Martinez J.  

Journal of Electromagnetic Waves and Applications, Vol. 24, Iss. 2-3, 2010-01 ,pp. : 351-361

Taylor & Francis Ltd

Access to resources Recommend Favorite

Photoacoustic Spectroscopic Study of Optical Band Gap of Zn_1-xBe_xSe Semiconductors

By Sarkar B.   Chaudhuri B.  

International Journal of Thermophysics, Vol. 26, Iss. 1, 2005-01 ,pp. : 295-303

Springer Publishing Company

Access to resources Recommend Favorite