Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature Operation

Publisher： Edp Sciences

E-ISSN： 1764-7177|06|C3|C3-43-C3-47

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-43-C3-47

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