Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs

Publisher： Edp Sciences

E-ISSN： 1764-7177|08|PR3|Pr3-13-Pr3-16

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-13-Pr3-16

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