Publisher： Edp Sciences
E-ISSN： 1764-7177|7|C2|C2-697-C2-698
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.7, Iss.C2, 1997-04, pp. : C2-697-C2-698
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems
Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. :
Access to resources
Recommend
RESONANT 4f PHOTOEMISSION AND Yb L
Le Journal de Physique Colloques, Vol. 48, Iss. C9, 1987-12 ,pp. :
Observation du début de la croissance du GaAs/InP par OMCVD
Journal de Physique III, Vol. 2, Iss. 3, 1992-03 ,pp. :
Properties of VAs/GaAs interface from first principles study
Journal of Physics: Conference Series , Vol. 29, Iss. 1, 2006-01 ,pp. :
Access to resources
Morphology of the Ag GaSb (110) interface : a study by quantitative AES
Journal de Physique III, Vol. 2, Iss. 2, 1992-02 ,pp. :