Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures

E-ISSN： 1764-7177|08|PR3|Pr3-99-Pr3-102

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-99-Pr3-102

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Extraction of collector-base resistance of UHV/CVD SiGe HBTs operating at low temperatures

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-95-Pr3-98

Edp Sciences

Access to resources Recommend Favorite

Operation of SiGe bipolar technology at cryogenic temperatures

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-101-C6-110

Edp Sciences

Access to resources Recommend Favorite

Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology

By Jia Lin Ma Jian Guo Yeo Kiat Seng Do Manh Anh

International Journal of Infrared and Millimeter Waves, Vol. 25, Iss. 1, 2004-01 ,pp. : 55-62

Springer Publishing Company

Access to resources Recommend Favorite

Process stability of SiGe heterostructures for BiCMOS applications

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-327-Pr8-332

Edp Sciences

Access to resources Recommend Favorite

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 K

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-103-Pr3-107

Edp Sciences

Access to resources Recommend Favorite