Publisher: Edp Sciences
E-ISSN: 1764-7177|08|PR3|Pr3-103-Pr3-107
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-103-Pr3-107
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures
Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. :
Extraction of collector-base resistance of UHV/CVD SiGe HBTs operating at low temperatures
Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. :
Invited Paper
Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. :
Numerical simulation of SiGe HBT's at cryogenic temperatures
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :