Publisher： Edp Sciences
E-ISSN： 1764-7177|09|PR8|Pr8-1099-Pr8-1106
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.09, Iss.PR8, 1999-09, pp. : Pr8-1099-Pr8-1106
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Growth mechanisms of MOCVD processed Ni thin films
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
Access to resources
Recommend
MOCVD of ferroelectric thin films
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. :
MOCVD and properties of in situ doped Pt-SnO
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
MAGNETIC PROPERTIES OF ULTRA-THIN FILMS
Le Journal de Physique Colloques, Vol. 49, Iss. C8, 1988-12 ,pp. :