Publisher: Edp Sciences
E-ISSN: 1764-7177|11|PR3|Pr3-645-Pr3-652
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-645-Pr3-652
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
MOCVD of ferroelectric thin films
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
Growth mechanisms of MOCVD processed Ni thin films
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
HREM Characterization of Interfaces in Thin MOCVD Superconducting Films
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
Preparation of Barium Titanate Thin Films by MOCVD Using Ultrasonic Nebulization
Ferroelectrics, Vol. 406, Iss. 1, 2010-01 ,pp. :
Nickel Thin Films Grown by MOCVD Using Ni(dmg)
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :