Parasitic conduction in a 0.13 $\mu$m CMOS technology at low temperature

Publisher: Edp Sciences

E-ISSN: 1764-7177|12|3|61-64

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.12, Iss.3, 2002-05, pp. : 61-64

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