Low temperature operation of ultra-thin gate oxide sub-0.1 $\mu$m MOSFETs

Publisher： Edp Sciences

E-ISSN： 1764-7177|12|3|57-60

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.12, Iss.3, 2002-05, pp. : 57-60

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