Publisher： Edp Sciences
E-ISSN： 1764-7177|12|4|121-128
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.12, Iss.4, 2002-06, pp. : 121-128
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
Access to resources
Recommend
2D and 1D modeling of AMT barrel reactors for silicon deposition
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
Modeling of silicon epitaxial growth with SiHCl
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
A statistical thermodynamic approach to model plasma reactors
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :
Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. :