Publisher: Edp Sciences
E-ISSN: 0302-072x|41|17|415-418
ISSN: 0302-072x
Source: Journal de Physique Lettres, Vol.41, Iss.17, 1980-09, pp. : 415-418
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
PHONON SCATTERING BY Cr IONS IN GaAs AND THE EFFECT OF UNIAXIAL STRESS
Le Journal de Physique Colloques, Vol. 42, Iss. C6, 1981-12 ,pp. :
ANISOTROPY IN SULPHUR DOPING OF GaAs GROWN BY V.P.E.
Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. :
YAG photoluminescence of GaAs : Cr
Revue de Physique Appliquée (Paris), Vol. 15, Iss. 3, 1980-03 ,pp. :
Electroluminescence « à 1 eV » des diodes laser D.H. GaAs/(Ga, Al)As
Revue de Physique Appliquée (Paris), Vol. 15, Iss. 3, 1980-03 ,pp. :