Publisher: Edp Sciences
E-ISSN: 0035-1687|13|12|771-775
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 771-775
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Normally-off GaN Transistors for Power Applications
Journal of Physics: Conference Series , Vol. 494, Iss. 1, 2014-04 ,pp. :
Substrate and interface effects in GaAs fet's
Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. :
Dégradation des MESFETs GaAs : mécanismes liés à l'interface GaAs/SiO2
Revue de Physique Appliquée (Paris), Vol. 22, Iss. 5, 1987-05 ,pp. :
Radiation resistance of advanced GaAs MESFETs
By Kiselyova E. Kitaev M. Obolensky S. Trofimov V. Kozlov V.
Technical Physics, Vol. 50, Iss. 4, 2005-04 ,pp. :
GaAs MESFETs and monolithic circuits in cryogenic environments
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :