Related content

Silicon Wafer Surface-Temperature Monitoring System for Plasma Etching Process

By Yamada Y.  

International Journal of Thermophysics, Vol. 32, Iss. 7-8, 2011-08 ,pp. : 1457-1466

Springer Publishing Company

Access to resources Recommend Favorite

Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF 4 plasma

By Zhao Shu-Xia   Gao Fei   Wang You-Nian   Bogaerts Annemie  

Plasma Sources Science and Technology, Vol. 22, Iss. 1, 2013-02 ,pp. : 15017-15034

IOP Publishing

Access to resources Recommend Favorite

COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-79-C4-82

Edp Sciences

Access to resources Recommend Favorite

Plasma etch rate measurements of thin PMMA films and correlation with the glass transition temperature

By  

Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. : 405-408

IOP Publishing

Access to resources Recommend Favorite

Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

By  

Revue de Physique Appliquée (Paris), Vol. 24, Iss. 3, 1989-03 ,pp. : 295-308

Edp Sciences

Access to resources Recommend Favorite