Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF 4 plasma

Author： Zhao Shu-Xia Gao Fei Wang You-Nian Bogaerts Annemie

ISSN： 0963-0252

Source： Plasma Sources Science and Technology, Vol.22, Iss.1, 2013-02, pp. : 15017-15034

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