Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

E-ISSN： 0035-1687|22|7|631-636

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.22, Iss.7, 1987-07, pp. : 631-636

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

STRUCTURAL AND ELECTRICAL EFFECTS OF DOPANT SEGREGATION TO SILICON GRAIN BOUNDARIES

Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. : C4-411-C4-416

Edp Sciences

Access to resources Recommend Favorite

GRAIN BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-9-C1-14

Edp Sciences

Access to resources Recommend Favorite

TEM INVESTIGATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SILICON

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-21-C1-25

Edp Sciences

Access to resources Recommend Favorite

Kinetics of impurity segregation at grain boundaries in polycrystals. II. Concentrated solution

By Slezov V. Davydov L. Rogozhkin V.

Physics of the Solid State, Vol. 40, Iss. 2, 1998-02 ,pp. : 226-228

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical properties

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 623-629

Edp Sciences

Access to resources Recommend Favorite