Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical properties

Publisher： Edp Sciences

E-ISSN： 0035-1687|22|7|623-629

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.22, Iss.7, 1987-07, pp. : 623-629

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C6, 1982-12 ,pp. : C6-283-C6-292

Edp Sciences

Access to resources Recommend Favorite

On the origin of the electrical activity in silicon grain boundaries

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 613-621

Edp Sciences

Access to resources Recommend Favorite

Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 631-636

Edp Sciences

Access to resources Recommend Favorite

ORIENTATION RELATIONSHIPS, MICROSTRUCTURE AND ELECTRICAL BEHAVIOUR OF GRAIN BOUNDARIES IN CERAMIC SUPERCONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-991-C1-996

Edp Sciences

Access to resources Recommend Favorite

ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-439-C1-444

Edp Sciences

Access to resources Recommend Favorite