A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C4|C4-511-C4-514

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-511-C4-514

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Amorphous silicon on p-type crystalline silicon heterojunction

By  

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 641-644

Edp Sciences

Access to resources Recommend Favorite

Ge-intercalated graphene: The origin of the p-type to n-type transition

By Kaloni T. P.   Upadhyay Kahaly M.   Cheng Y. C.   Schwingenschlögl U.  

EPL (EUROPHYSICS LETTERS), Vol. 99, Iss. 5, 2012-09 ,pp. : 57002-57002

Edp Sciences

Access to resources Recommend Favorite

Electronic structure model for n- and p-type silicon quantum dots

By Fang T.-.N.   Paul Ruden P.  

Superlattices and Microstructures, Vol. 22, Iss. 4, 1997-12 ,pp. : 589-596

Academic Press

Access to resources Recommend Favorite

Ultrasonic spectroscopy in p-type silicon

By  

Journal de Physique Lettres, Vol. 40, Iss. 3, 1979-02 ,pp. : 53-55

Edp Sciences

Access to resources Recommend Favorite

NOISE AND DIFFUSION IN p-TYPE SILICON

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-165-C4-168

Edp Sciences

Access to resources Recommend Favorite