RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C5|C5-415-C5-419

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C5, 1983-10, pp. : C5-415-C5-419

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