LASER ANNEALING OF Te IMPLANTED IN SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|41|C1|C1-433-C1-433

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.41, Iss.C1, 1980-01, pp. : C1-433-C1-433

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Te+ implanted silicon structure and electrical resistance dependence on high frequency electromagnetic field annealing

By  

Journal of Physics: Conference Series , Vol. 113, Iss. 1, 2008-05 ,pp. : 173-176

IOP Publishing

Access to resources Recommend Favorite

Pulsed nanosecond annealing of magnesium-implanted silicon

By Galkin N.   Vavanova S.   Galkin K.   Batalov R.   Bayazitov R.   Nuzhdin V.  

Technical Physics, Vol. 58, Iss. 1, 2013-01 ,pp. : 94-99

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

PULSED ELECTRON BEAM ANNEALING OF As AND B IMPLANTED SILICON

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-209-C5-214

Edp Sciences

Access to resources Recommend Favorite

INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS IMPLANTED SILICON, WITH SOLAR CELL PRODUCTION IN VIEW

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-381-C5-385

Edp Sciences

Access to resources Recommend Favorite

EVIDENCE OF STRUCTURAL MODIFICATION OF IMPLANTED SILICON DURING FURNACE ANNEALING

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C10, 1983-12 ,pp. : C10-267-C10-271

Edp Sciences

Access to resources Recommend Favorite