LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP

Publisher： Edp Sciences

E-ISSN： 0449-1947|43|C5|C5-61-C5-68

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.43, Iss.C5, 1982-12, pp. : C5-61-C5-68

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