Room-Temperature Annealing of 1MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells

Author： Hai-Jiao Wang   Yu-Dong Li   Qi Guo   Li-Ya Ma   Lin Wen   Bo Wang  

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|5|56102-56105

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.5, 2015-05, pp. : 56102-56105

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Temperature dependence of relaxation times in electron focusing and antidot structures made from In0.53 Ga0.47 As/InP heterojunctions

By Heremans J.   Fuller B.K.   Thrush C.M.   Bayot V.  

Superlattices and Microstructures, Vol. 24, Iss. 4, 1998-09 ,pp. : 263-267

Academic Press

Access to resources Recommend Favorite

Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates

By Kulbachinskii V.   Lunin R.   Yuzeeva N.   Vasil’evskii I.   Galiev G.   Klimov E.  

Journal of Experimental and Theoretical Physics, Vol. 116, Iss. 5, 2013-05 ,pp. : 755-759

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions

By  

Journal de Physique Lettres, Vol. 43, Iss. 16, 1982-08 ,pp. : 613-616

Edp Sciences

Access to resources Recommend Favorite

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-61-C5-68

Edp Sciences

Access to resources Recommend Favorite

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

By Vinokurov D.   Zorina S.   Kapitonov V.   Nikolaev D.   Stankevich A.   Shamakhov V.   Tarasov I.  

Technical Physics Letters, Vol. 32, Iss. 4, 2006-04 ,pp. : 299-301

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite