Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C4|C4-783-C4-786
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-783-C4-786
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
DEGRADATION OF SHORT-CHANNEL MOS TRANSISTORS STRESSED AT LOW TEMPERATURE
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
GATE OXIDE QUALITY OF DRAM TRENCH CAPACITORS
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :