Related content

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-651-C4-655

Edp Sciences

Access to resources Recommend Favorite

Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

By  

Chinese Physics Letters, Vol. 32, Iss. 8, 2015-01 ,pp. : 88502-88504

IOP Publishing

Access to resources Recommend Favorite

The temperature influence of substrate current in submicron N-channel MOSFETs

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-53-Pr3-56

Edp Sciences

Access to resources Recommend Favorite

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

By Hai-Feng Chen   Yue Hao   Xiao-Hua Ma   Yan-Rong Cao   Zhi-Yuan Gao   Xin Gong  

Chinese Physics, Vol. 16, Iss. 10, 2007-10 ,pp. : 3114-3119

IOP Publishing

Access to resources Recommend Favorite

The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures

By  

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 11-14

Edp Sciences

Access to resources Recommend Favorite