INFLUENCE OF HYDROGEN RELATED DEFECTS ON THE Qot, Dit BUILD-UP DUE TO STRESS AND ANNEALING IN THE MOS SYSTEM

Publisher: Edp Sciences

E-ISSN: 0449-1947|49|C4|C4-757-C4-760

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-757-C4-760

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