

Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C4|C4-49-C4-52
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-49-C4-52
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content


By Rui Chen Jian-Wei Han Han-Sheng Zheng Yong-Tao Yu Shi-Peng Shangguang Guo-Qiang Feng Ying-Qi Ma
Chinese Physics B, Vol. 24, Iss. 4, 2015-04 ,pp. :








MAXIMUM OPERATING VOLTAGE LIMITATIONS DUE TO PARASITIC BIPOLAR ACTION IN VLSI CMOS
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :