Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C4|C4-63-C4-66
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-63-C4-66
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Direct bonding of silicon wafers with a diffusion layer
By Voronkov V. Guk E. Kozlov V. Shuman V.
Technical Physics Letters, Vol. 24, Iss. 3, 1998-03 ,pp. :
Structure and properties of dislocations in interfaces of bonded silicon wafers
Journal of Physics: Conference Series , Vol. 281, Iss. 1, 2011-02 ,pp. :
ELECTRONIC PROPERTIES AT ABRUPT METAL-Si (III) INTERFACES
Le Journal de Physique Colloques, Vol. 45, Iss. C5, 1984-04 ,pp. :
Electronic properties of metal/MgO(001) interfaces
Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. :