EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS

Publisher： Edp Sciences

E-ISSN： 0449-1947|50|C6|C6-159-C6-159

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.50, Iss.C6, 1989-06, pp. : C6-159-C6-159

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

ELECTRONIC AND STRUCTURAL PROPERTIES OF GRAIN BOUNDARIES IN Cz-GROWN SILICON BICRYSTALS

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-89-C1-94

Edp Sciences

Access to resources Recommend Favorite

Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 631-636

Edp Sciences

Access to resources Recommend Favorite

CHARGED GRAIN-BOUNDARIES IN n-Ge BICRYSTALS

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-135-C1-139

Edp Sciences

Access to resources Recommend Favorite

GRAIN-BOUNDARIES CURRENT-VOLTAGE CHARACTERISTICS ON Si (p) BICRYSTALS : MULTI-STEP RESONANCE TUNNELING CONDUCTION THROUGH TRAPS

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-165-C1-170

Edp Sciences

Access to resources Recommend Favorite

Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)

By  

Revue de Physique Appliquée (Paris), Vol. 17, Iss. 3, 1982-03 ,pp. : 119-124

Edp Sciences

Access to resources Recommend Favorite