Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C5|C5-719-C5-730
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C5, 1988-10, pp. : C5-719-C5-730
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Temperature behavior of the growth mechanism during layer epitaxial growth
Journal of Physics: Conference Series , Vol. 100, Iss. 8, 2008-03 ,pp. :
Model of growth for long-range chemically ordered compounds : application to quasicrystals
Journal de Physique I, Vol. 4, Iss. 11, 1994-11 ,pp. :
Intermixing during epitaxial growth and Mössbauer spectroscopy with probe layers
Hyperfine Interactions, Vol. 169, Iss. 1-3, 2006-04 ,pp. :
THE SELECTIVE EPITAXIAL GROWTH OF SILICON
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
Characterizing equilibrium in epitaxial growth
By Patrone P. N. Caflisch R. E. Margetis D.
EPL (EUROPHYSICS LETTERS), Vol. 97, Iss. 4, 2012-02 ,pp. :