

Publisher: Edp Sciences
E-ISSN: 1764-7177|02|C2|C2-745-C2-778
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-745-C2-778
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content


Low pressure silicon selective epitaxial growth and its thermodynamic considerations
Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. :


EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :


Influence of kinetic roughening on the epitaxial growth of silicon
Journal de Physique I, Vol. 4, Iss. 9, 1994-09 ,pp. :




EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR
Le Journal de Physique Colloques, Vol. 50, Iss. C5, 1989-05 ,pp. :