ON THE KINETICS OF THE CVD OF Si FROM SiH2Cl2/H2 AND SiC FROM CH3SiCl3/H2 IN A VERTICAL TUBULAR HOT-WALL REACTOR

Publisher： Edp Sciences

E-ISSN： 0449-1947|50|C5|C5-93-C5-103

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.50, Iss.C5, 1989-05, pp. : C5-93-C5-103

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