Performance Upper Limit of sub‐10 nm Monolayer MoS₂ Transistors

E-ISSN： 2199-160x|2|9|aelm.201600191-aelm.201600191

ISSN： 2199-160X

Source： ADVANCED ELECTRONIC MATERIALS, Vol.2, Iss.9, 2016-09, pp. : n/a-n/a

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