Influence of sputtering pressure on the microstructure evolution of AlN thin films prepared by reactive sputtering

By Lee H.-C.   Lee K.-Y.   Yong Y.-J.   Lee J.-Y.   Kim G.-H.   Chun C.-H.   Hong S.-K.  

Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 148-153

Elsevier

Access to resources Recommend Favorite

Control of preferential orientation of AlN films prepared by the reactive sputtering method

By Ishihara M.   Li S.J.   Yumoto H.   Akashi K.   Ide Y.  

Thin Solid Films, Vol. 316, Iss. 1, 1998-03 ,pp. : 152-157

Elsevier

Access to resources Recommend Favorite

Study of reactive DC magnetron sputtering deposition of AlN thin films

By Dechev D.A.   Dimitrova V.I.   Manova D.I.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 193-197

Elsevier

Access to resources Recommend Favorite

Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputtering

By Lee H.-C.   Lee K.-Y.   Yong Y.-J.   Lee J.-Y.   Kim G.-H.  

Thin Solid Films, Vol. 271, Iss. 1, 1995-12 ,pp. : 50-55

Elsevier

Access to resources Recommend Favorite

The effects of deposition parameters on the crystallographic orientation of AlN films prepared by RF reactive sputtering

By Zhao Y.N.   Wang B.   He Z.  

Vacuum, Vol. 48, Iss. 5, 1997-05 ,pp. : 427-429

Elsevier

Access to resources Recommend Favorite