Cubic Siloxanes with Both Si−H and Si−OtBu Groups for Site‐Selective Siloxane Bond Formation

E-ISSN： 1521-3765|22|39|13737-13737

ISSN： 0947-6539

Source： CHEMISTRY - A EUROPEAN JOURNAL, Vol.22, Iss.39, 2016-09, pp. : 13737-13737

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Cover Picture: Cubic Siloxanes with Both Si−H and Si−OtBu Groups for Site‐Selective Siloxane Bond Formation (Chem. Eur. J. 39/2016)

CHEMISTRY - A EUROPEAN JOURNAL, Vol. 22, Iss. 39, 2016-09 ,pp. : 13733-13733

John Wiley & Sons Inc

Access to resources Recommend Favorite

Deposition, defect and weak bond formation processes in a-Si:H

By Robertson J. Powell M.J.

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 32-36

Elsevier

Access to resources Recommend Favorite

Catalytic decomposition of SiH 4 on a hot filament

By Tange S. Inoue K. Tonokura K. Koshi M.

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 42-46

Elsevier

Access to resources Recommend Favorite

Formation of relaxed SiGe films on Si by selective epitaxial growth

By Kawaguchi K. Usami N. Shiraki Y.

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 126-129

Elsevier

Access to resources Recommend Favorite

High deposition rate a-Si:H layers from pure SiH 4 and from a 10% dilution of SiH 4 in H 2

By Estrada M. Cerdeira A. Pereyra I. Soto S.

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 176-179

Elsevier

Access to resources Recommend Favorite