Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

Publisher： Edp Sciences

E-ISSN： 2100-014x|48|issue|00002-00002

ISSN： 2100-014x

Source： EPJ Web of Conference, Vol.48, Iss.issue, 2013-04, pp. : 00002-00002

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Pulsed laser deposition of c-axis oriented aluminum nitride thin films on silicon

By Tabbal M.   Mérel P.   Chaker M.   Pépin H.  

EPJ Applied Physics (The), Vol. 14, Iss. 2, 2010-03 ,pp. : 115-119

Edp Sciences

Access to resources Recommend Favorite

Oxidation in air of nitride bonded silicon carbide ceramic

By Zymla A.   Zymla V.   Pawlik T.   Sopicka-Lizer M.   Guillot J.-B.  

Revue de Métallurgie, Vol. 101, Iss. 5, 2010-03 ,pp. : 427-439

Edp Sciences

Access to resources Recommend Favorite

Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

By  

EPJ Web of Conference, Vol. 23, Iss. issue, 2012-03 ,pp. : 00020-00020

Edp Sciences

Access to resources Recommend Favorite

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

By Valovič A.   Huran J.   Kučera M.   Kobzev A.P.   Gaži Š.  

EPJ Applied Physics (The), Vol. 56, Iss. 2, 2011-10 ,pp. : 24013-24013

Edp Sciences

Access to resources Recommend Favorite

DFT study of cerium doped aluminum nitride

By Dar Amna   Majid Abdul  

EPJ Applied Physics (The), Vol. 71, Iss. 1, 2015-07 ,pp. : 10101-10101

Edp Sciences

Access to resources Recommend Favorite