Raman characterization of theIn$_{0.14}$Ga$_{0.86}$As$_{0.13}$Sb$_{0.87}$ highly doped with Tegrown on GaSb by liquid phase epitaxy

Publisher： Edp Sciences

E-ISSN： 1764-7177|132|issue|211-214

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 211-214

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